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Product Detailed Parameters
- Description：MOSFET N-CH 60V 14A/79A 8TSDSON
- Series：OptiMOS™ 3
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5100 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerVDFN
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Overview
BSZ067N06LS3GATMA1 is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS 3 product family. It features a TSDSON-8 surface-mount package with an exposed pad for thermal management. The device is rated for a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 14 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 12.1 mΩ and a gate charge (Qg) of 35 nC. It operates within a temperature range of -55°C to +150°C and includes a built-in body diode.
Feature Summary
- OptiMOS 3 technology provides optimized performance for low-voltage switching applications.
- Logic level compatible gate structure allows direct drive from standard logic interfaces.
- Single configuration with an integrated body diode simplifies circuit design.
- TSDSON-8 package offers high power density and efficient heat dissipation via an exposed thermal pad.
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the complete ordering code BSZ067N06LS3GATMA1 against official Infineon documentation to ensure correct suffix identification. Confirm RoHS compliance status and specific tape-and-reel packaging quantities directly with the manufacturer or authorized distributors prior to procurement.
Selection Notes
Select this component for applications requiring 60 V blocking capability and moderate current handling up to 14 A. Evaluate the 12.1 mΩ on-resistance against system conduction loss requirements. Ensure the TSDSON-8 footprint matches the PCB layout constraints and that thermal management strategies accommodate the package's power dissipation characteristics.
Part Context
This component belongs to the Infineon OptiMOS 3 series, designed for general-purpose power switching in low-voltage environments. The BSZ prefix indicates an N-channel MOSFET, while the numeric coding reflects its voltage and current ratings relative to other devices in the portfolio.
Replacement Considerations
Cross-reference with other OptiMOS 3 variants such as BSZ065N06LS5ATMA1 or BSZ100N06LS3G for alternative pin-compatible options with different current or resistance specifications.
