BSZ0907NDXTMA2

Description：MOSFET 2N-CH 30V 6.7A WISON-8
Series：OptiMOS™

SKU:68d93b23064d Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.7A WISON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.7A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs：9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.4nC @ 4.5V, 7.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：730pF @ 15V, 900pF @ 15V
Power - Max：700mW (Ta), 860mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerVDFN
Supplier Device Package：PG-WISON-8
Grade：-
Qualification：-

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BSZ0907NDXTMA2

Overview

The BSZ0907NDXTMA2 is a small signal field-effect transistor manufactured by Infineon Technologies. It is an N-channel silicon metal-oxide semiconductor FET housed in a WISON-8 surface-mount package. The device features a maximum drain current of 8.5 A and a maximum drain-source on-resistance of 13 mΩ. It operates with a gate threshold voltage range of 1.2 V to 2 V and supports a junction temperature up to 150 °C.

Feature Summary

Dual-element configuration with built-in diode for series applications
Avalanche rated capability for robust operation under transient conditions
Low on-resistance optimized for efficient power switching

Applications

Wireless charging solutions
Consumer electronics power stages
Industrial power management circuits

Procurement Notes

Verify the specific suffix XTMA1 or ND against official datasheets, as packaging and tape specifications may vary. Confirm RoHS compliance status directly from the manufacturer's documentation before integration into regulated assemblies.

Selection Notes

Select this component for low-voltage synchronous rectification where compact dual-channel integration is required. Ensure the 30 V drain-source voltage rating exceeds the circuit's peak operating voltage to maintain reliability.

Part Context

This part belongs to Infineon's OptiMOS family of power MOSFETs designed for high efficiency in low-voltage applications. The WISON-8 package provides thermal performance suitable for board-mounted implementations in space-constrained designs.