ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 40V 8.9A/31A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta), 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：16.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The BSZ165N04NSGATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS series. It features a 40 V drain-source voltage rating and supports a continuous drain current of up to 31 A, with a pulsed current capacity of 124 A. The device exhibits a maximum on-resistance of 16.5 mΩ at 10 V gate drive. Packaged in a PQFN 3.3 x 3.3 mm footprint, it operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Optimized low on-resistance for high efficiency
- Enhanced avalanche ruggedness
- Lead-free packaging compliant with RoHS standards
Applications
- DC-DC converter modules
- Power distribution networks
- Load switching applications
Procurement Notes
Verify the complete part number including suffixes against official manufacturer documentation before procurement. Confirm that the specific ordering code matches the required package variant and tape-and-reel specifications. Cross-reference datasheet revisions to ensure compatibility with design requirements.
Selection Notes
Select this component for designs requiring robust performance in low-voltage environments. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Ensure gate drive voltages remain within the recommended operating limits to maintain optimal switching characteristics and prevent device degradation.
Part Context
This component belongs to the OptiMOS family of power transistors designed by Infineon Technologies. These devices utilize advanced silicon technology to deliver superior performance in terms of switching speed and conduction losses compared to standard MOSFETs.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter margins when considering cross-brand replacements.
