BSZ520N15NS3GATMA1

$1.29

Description：MOSFET N-CH 150V 21A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1a0196f55866 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 150V 21A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：890 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：57W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ520N15NS3GATMA1

Overview

The BSZ520N15NS3GATMA1 is a single N-channel Power-Transistor from the OptiMOS 3 series by Infineon Technologies. It utilizes PG-TDSON-8 (TSDSON-8) surface-mount packaging and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 150 V, a continuous drain current of 21 A at 25°C case temperature, and a maximum on-state resistance of 52 mΩ at 10 V gate drive. The device features a typical gate charge of 8.7 nC, a threshold voltage range of 2 V to 4 V, and a power dissipation capacity of 57 W. Operating temperatures span from -55°C to +150°C junction temperature.

Feature Summary

Optimized low on-resistance for high efficiency in power switching applications
Enhanced gate robustness against static discharge and transient voltages
Designed for fast switching speeds with low gate charge characteristics
Compliant with lead-free soldering processes and RoHS standards

Applications

DC-DC converter circuits
Motor control systems
Power supply load switches
General purpose power switching

Procurement Notes

Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging quantities and manufacturing lot traceability. Ensure the component matches the PG-TDSON-8 footprint dimensions and thermal pad specifications required by the target PCB layout. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a 150 V rating and approximately 52 mΩ on-resistance are required in an 8-pin surface-mount package. Consider the 21 A continuous current limit and 57 W power dissipation capabilities relative to the available thermal management solution. Evaluate the gate charge requirements against the driving circuit's capability to ensure adequate switching performance within the desired frequency range.

Part Context

This part belongs to the OptiMOS 3 family of N-channel MOSFETs designed for general power switching. It shares the TSDSON-8 form factor with other devices in the series but offers distinct electrical characteristics tailored for specific voltage and current levels. The product line emphasizes reliability and thermal performance for compact electronic designs.

Replacement Considerations

Direct substitutes within the same package and electrical class include BSC520N15NS3G and BSZ900N15NS3G. Verify pinout compatibility and thermal resistance values when substituting. Ensure the alternative device meets the 150 V and 21 A requirements without compromising the system's safety margins.