BTS113ANKSA1

Overview

The BTS113ANKSA1 is a N-channel logic-level enhancement mode TEMPFET with an integrated temperature sensor exhibiting thyristor characteristics. It features a drain pin electrically shorted to the tab for TO-220AB packaging. Key electrical parameters include a drain-source voltage of 60 V, continuous drain current of 11.5 A at 25 °C, and on-state resistance of 0.17 Ω. The device supports a junction temperature range from -55 °C to +150 °C.

Feature Summary

• Integrates a temperature sensor with thyristor characteristic for thermal monitoring
• Features a logic-level enhancement mode N-channel MOSFET structure
• Provides direct electrical connection between the drain pin and the package tab

Applications

• Automotive lighting systems
• Motor control applications
• General power switching circuits requiring thermal sensing

Procurement Notes

Verify the specific ordering code C67078-S5015-A4 against the requested model number to ensure correct package variant selection. Confirm that the SMD version designation aligns with the intended assembly process requirements before finalizing procurement orders.

Selection Notes

Select this component when a combined power switch and temperature sensor solution is required within a single package. The logic-level gate drive capability simplifies interface design with standard microcontrollers or low-voltage control signals in automotive environments.

Part Context

This part belongs to Infineon's TEMPFET family, which combines power MOSFET technology with integrated thermal protection sensors. The BTS113A specifically targets automotive applications where space constraints and functional integration are critical design factors.

Replacement Considerations

Direct substitutes include other TEMPFET variants such as BTS112A or BTS115A. Verify pinout compatibility and thermal performance specifications before implementing any cross-replacement in existing designs.