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Product Detailed Parameters
- Description：MOSFET N-CH 49V 80A TO263-7
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：49 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id：2V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs：232 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 25 V
- FET Feature：Temperature Sensing Diode
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-7-1
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The BTS282ZE3180AATMA2 is an automotive low-side smart power switch from the HITFET family. It features a single channel with a maximum drain-source voltage of 49 V and a nominal load current of 52 A. The device operates within a temperature range of -40 °C to 175 °C. Key electrical parameters include a maximum on-state resistance of 6.5 mΩ at 150 °C, peak total power dissipation of 300 W, and avalanche energy capability of 2000 mJ. Switching times are specified as 0.1 µs for turn-on and 0.16 µs for turn-off.
Feature Summary
- Integrated protection against over-current, short-circuit, and thermal overload conditions.
- High avalanche energy capability for robust operation in inductive load environments.
- Designed for surface-mount technology installation.
Applications
- Automotive lighting systems
- Solenoid control
- Valve actuation
Procurement Notes
Verify the complete part number including suffixes such as ATMA2 to ensure correct packaging and tape-and-reel configuration. Confirm that the specific variant matches the required automotive qualification standards and package type before procurement. Cross-reference official datasheets for any recent updates regarding material content or compliance certifications.
Selection Notes
Select this component for applications requiring high current handling up to 52 A with integrated diagnostic capabilities. Ensure the system design accommodates the specified thermal management requirements given the 300 W power dissipation limit. Verify compatibility with the 49 V supply voltage and confirm that the latch protection strategy aligns with the system's fault recovery logic.
Part Context
This device belongs to Infineon's HITFET family of low-side switches, engineered for demanding automotive environments. It combines power MOSFET technology with intelligent control circuitry to provide reliable switching for heavy loads. The product is designed to meet stringent automotive reliability standards and offers enhanced durability compared to standard discrete solutions.
Replacement Considerations
Check for direct substitutes within the same HITFET family or compatible low-side switch series. Verify pinout compatibility and electrical parameter equivalence, particularly regarding current ratings and on-resistance, when considering alternative components.
