BUJ103AX,127

Single Bipolar Transistors Overview

The BUJ103AX,127 is a high-voltage, high-speed planar-passivated NPN power switching transistor manufactured by WeEn Semiconductors. It utilizes silicon technology and is housed in a TO-220F-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 400 V and a collector-base voltage (VCBO) of 700 V. The device supports a maximum DC collector current of 4 A with a total power dissipation of 26 W. It features a minimum DC current gain (hFE) of 10 and a maximum of 32. The component operates at temperatures up to +150°C.

Single Bipolar Transistors Feature Summary

• High-speed planar-passivated NPN structure for efficient switching
• Designed for high-frequency electronic lighting ballast applications
• Suitable for converters, inverters, and switching regulators
• Robust thermal performance in TO-220F plastic full-pack envelope

Single Bipolar Transistors Applications

• High frequency electronic lighting ballasts
• Power converters and inverters
• Switching regulators
• Motor control systems

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage NPN switching capabilities with moderate current handling. The 400 V rating suits applications where standard low-voltage transistors are insufficient. Ensure the design accommodates the 26 W power dissipation requirement and provides adequate heatsinking for the TO-220F package to maintain junction temperature within the specified limits during operation.

Single Bipolar Transistors Part Context

This part belongs to the BUJ series of high-voltage, high-speed planar-passivated NPN power switching transistors from WeEn Semiconductors. The series is engineered for robust performance in demanding power electronics environments. The BUJ103AX variant specifically targets the 400 V breakdown voltage range, offering a balance between voltage withstand capability and current capacity for general-purpose high-power switching tasks.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.