ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：BUK4D110-20P/SOT1220/DFN2020MD
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta), 6.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：96mOhm @ 3.4A, 8V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：365 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 7.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The BUK4D110-20PH is a P-channel Power MOSFET manufactured by Nexperia. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 3.4 A at ambient temperature, rising to 6.7 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 0.096 ohm. It is housed in a DFN2020MD surface-mount package with a power dissipation rating of 7.5 W. The gate charge is specified at 3.6 nC, and it operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- P-channel silicon MOSFET technology for low-to-middle voltage applications
- Space-saving DFN2020MD surface-mount packaging
- High thermal performance supporting up to 175 °C junction temperature
Applications
- Low-side and high-side switching in DC-DC converters
- Load switching in portable electronic devices
- Power management circuits in automotive electronics
Procurement Notes
Verify the exact suffix against the manufacturer's official datasheet to confirm electrical parameters, as variations exist between PH and PX variants. Ensure the ordering part number matches the required Rds(on) and current ratings for your specific design constraints. Cross-reference with Nexperia documentation to validate package dimensions and thermal characteristics before finalizing procurement.
Selection Notes
Select this component for applications requiring a compact P-channel switch with 20 V capability. Compare the 0.096 ohm Rds(on) against circuit loss requirements. Consider the DFN2020MD footprint for PCB space constraints. Evaluate thermal management needs given the 7.5 W dissipation rating and operating temperature limits relative to your system environment.
Part Context
This device belongs to Nexperia’s portfolio of low- and middle-voltage silicon MOSFETs designed for efficiency and space optimization. The BUK4D series utilizes advanced cell technology to minimize on-resistance while maintaining robust switching performance. It is engineered for modern electronics where small form factors and reliable thermal operation are critical design drivers.
Replacement Considerations
The BUK4D110-20PX is a related variant in the same family but may differ in on-state resistance and current handling. Verify compatibility by comparing datasheet specifications directly. Do not assume interchangeability without confirming electrical and thermal parameters match your application requirements.
