BUK4D38-20PX

$0.14

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:b6034c4a85dd Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
Rds On (Max) @ Id, Vgs：33mOhm @ 6A, 8V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1025 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D38-20PX

Overview

The BUK4D38-20PX is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates with a drain-source voltage of -20 V and supports a continuous drain current of -18 A at 25 °C. The device features a maximum on-state resistance of 38 mΩ and total power dissipation of 19 W. It includes ESD protection exceeding 1 kV HBM and is qualified to AEC-Q101 standards. The component functions within an extended temperature range, supporting junction temperatures up to 175 °C.

Feature Summary

Trench MOSFET technology for enhanced performance
Extended operating temperature range up to 175 °C
Side wettable flanks for optical solder inspection
AEC-Q101 automotive qualification

Applications

DC to DC conversion
High-speed line driver
High-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and reel specifications. Ensure the requested part number matches the exact marking code and pin configuration required for the design. Confirm compliance with RoHS directives and automotive reliability standards before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high-side switching or low-side control in automotive environments. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the gate drive voltage levels align with the specified threshold and on-state requirements for optimal efficiency.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade discrete semiconductors. It utilizes a DFN2020MD-6 (SOT1220) leadless package designed for surface-mount assembly. The product is engineered to meet rigorous automotive quality standards while providing compact form factors suitable for space-constrained electronic designs.

Replacement Considerations

Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts, electrical parameters, and package dimensions to ensure compatibility. Do not substitute without confirming functional equivalence and thermal performance in the target application.