BUK652R3-40C,127

$1.39

Description：MOSFET N-CH 40V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:8bc58f7b8587 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：15.1 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：306W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK652R3-40C,127

Overview

The BUK652R3-40C,127 is an N-channel TrenchMOS intermediate level FET manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology and is designed for high-performance automotive applications, meeting AEC-Q101 standards. The device features a drain-source voltage of 40 V and a continuous drain current of 120 A at a mounting base temperature of 25 °C. Total power dissipation reaches 306 W under the same conditions. The on-state resistance (RDSon) is typically 22.3 mΩ at VGS = 10 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 175 °C and is housed in a TO-220AB plastic package.

Feature Summary

AEC Q101 compliant for automotive reliability
Suitable for intermediate level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel MOSFETs with intermediate gate drive compatibility. Ensure thermal management solutions accommodate the 306 W dissipation capability at low mounting base temperatures. Verify that the 40 V rating aligns with the system's maximum transient voltages. Consider the 120 A continuous current limit relative to the expected operating load and ambient thermal conditions.

Part Context

This part belongs to Nexperia's portfolio of discrete, logic, and PowerMOS semiconductors. Originally developed under NXP Semiconductors, it continues as a standard product within Nexperia's lineup. The BUK652R3-40C is specifically engineered for the automotive sector, leveraging TrenchMOS technology to deliver high efficiency and ruggedness in demanding electrical environments.