BUK6607-55C,118

Overview

The BUK6607-55C,118 is a N-channel TrenchMOS logic and standard level gate drive Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology in a D2PAK plastic package (SOT404). The device is qualified to the AEC-Q101 standard for high-performance automotive applications. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 100 A at 25 °C mounting base temperature, and a total power dissipation of 158 W. The typical on-state resistance is 6.5 mΩ at VGS = 10 V.

Feature Summary

• Compliant with AEC-Q101 standards for automotive reliability
• Supports both logic and standard level gate drives
• Rated for thermally demanding environments up to 175 °C junction temperature

Applications

• 12 V and 24 V automotive systems
• Electric and electro-hydraulic power steering
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with logic-level compatibility. Ensure the thermal management design accommodates the 158 W dissipation rating and the 175 °C maximum junction temperature limit. Verify that the gate drive voltage aligns with the specified thresholds for optimal RDSon performance.

Part Context

This part belongs to Nexperia's portfolio of N-channel TrenchMOS FETs designed for intermediate and high-power switching. The D2PAK package provides a low thermal resistance path via the mounting base, which is internally connected to the drain terminal. This construction supports high current densities required in automotive power distribution and motor control modules.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material.