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Product Detailed Parameters
- Description：MOSFET N-CH 55V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：258 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK662R7-55C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It utilizes advanced TrenchMOS technology in a D2PAK (SOT404) plastic package. The device features a drain-source voltage of 55 V and supports continuous drain currents up to 120 A at a mounting base temperature of 25 °C. Total power dissipation reaches 306 W under the same conditions. The component operates within a junction temperature range of -55 °C to 175 °C, ensuring suitability for thermally demanding environments.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Optimized for intermediate level gate drive sources
- Capable of operation in thermally demanding environments due to a 175 °C rating
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the requested part number matches the exact electrical characteristics required for the target application. Ensure compliance with automotive qualification standards if used in safety-critical circuits. Cross-reference the latest datasheet revision to validate current production status and any potential design changes.
Selection Notes
Select this component for applications requiring robust switching capabilities in automotive power management. The intermediate gate drive requirement distinguishes it from logic-level alternatives. Consider the thermal resistance and power dissipation limits when designing heat sinks or PCB copper areas. Verify that the system's gate drive voltage aligns with the specified 10 V typical operating condition for optimal RDSon performance.
Part Context
This device belongs to the BUK66 series of N-channel TrenchMOS FETs manufactured by Nexperia. The series is engineered for high-current switching applications using advanced trench gate technology. The D2PAK package provides efficient thermal transfer through the exposed mounting base. This specific model targets the intermediate voltage segment suitable for 12 V and 24 V automotive architectures.
Replacement Considerations
Direct substitutes include other Nexperia BUK66 series parts with compatible voltage and current ratings, such as the BUK663R5-55C or BUK663R2-40C. Verify pinout compatibility and thermal characteristics before substitution. Ensure the replacement meets the same AEC-Q101 qualification requirements for automotive use.
