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Product Detailed Parameters
- Description：SMALL SIGNAL MOSFETS FOR AUTOMOT
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：23mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：582 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The Nexperia BUK6D23-40EH is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a DFN2020MD-6 (SOT1220) surface-mount package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 40 V and a continuous drain current of 19 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 23 mΩ, a gate-source voltage rating of ±20 V, and a total power dissipation capacity of 15 W. It features an extended junction temperature range up to 175 °C and is qualified to the AEC-Q101 standard.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Extended temperature range with Tj up to 175 °C
- Side wettable flanks enable optical solder inspection
- Ultra-thin leadless SMD plastic package
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix 'EH' against official Nexperia documentation to confirm reel packaging or tape specifications. Ensure the component matches the DFN2020MD-6 package outline and verify that the marking code corresponds to the intended part variant before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low-profile surface-mount solutions with high thermal performance. The Trench MOSFET technology provides efficient switching characteristics suitable for compact power management systems. Consider the 175 °C operating limit for environments demanding robust thermal resilience without excessive heatsinking requirements.
Part Context
This device belongs to the Nexperia BUK6D series of N-channel MOSFETs designed for medium-power applications. It utilizes advanced Trench MOSFET technology to achieve low on-state resistance within a highly miniaturized footprint. The product family targets industries requiring reliable discrete semiconductors in space-constrained layouts.
Replacement Considerations
Direct substitutes must match the 40 V rating, 19 A current capability, and DFN2020MD-6 package dimensions. Verify pinout compatibility and ensure equivalent thermal resistance values are maintained to prevent overheating in existing board layouts.
