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The BUK6D77-60EX is a single N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) plastic surface-mount package with side wettable flanks. The device supports an extended junction temperature range up to 175 °C and features AEC-Q101 qualification for automotive reliability. Key electrical parameters include a drain-source voltage of 60 V, a continuous drain current of 10.6 A at 25 °C case temperature, and a maximum on-state resistance of 77 mΩ at VGS = 10 V.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Confirm that the component meets all required automotive quality standards if deployed in vehicle systems. Ensure design margins account for the specified absolute maximum ratings to prevent permanent damage during operation.
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The DFN2020MD-6 package offers a small footprint suitable for space-constrained designs. Verify that the 60 V rating aligns with the system's maximum operating voltage and that the thermal management strategy accommodates the specified power dissipation limits.
This part belongs to the Nexperia BUK6D series of medium-power N-channel MOSFETs. These devices are engineered for efficient power control in compact form factors. The series utilizes advanced trench technology to balance low conduction losses with fast switching speeds, making them suitable for modern electronic control units and power management modules.
BUK6D77-60E