BUK725R0-40C,118

$1.01

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4169100881c1 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3820 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：157W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK725R0-40C,118

Overview

The BUK725R0-40C is an N-channel TrenchMOS standard level FET designed for high-performance automotive applications. It features a 40 V drain-source voltage rating and supports continuous drain currents up to 75 A, limited by the package thermal characteristics. The device exhibits a typical on-state resistance of 4.15 mΩ at 25 °C and handles peak pulsed currents of 490 A. It includes avalanche ruggedness with a non-repetitive energy rating of 240 mJ. Operating temperatures range from -55 °C to +175 °C junction temperature.

Feature Summary

AEC Q101 compliant for automotive reliability
Avalanche robust design for inductive load switching
Suitable for standard level gate drive circuits
Rated for thermally demanding environments up to 175°C

Applications

12V Motor, lamp and solenoid loads
High performance automotive power systems
High performance Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current database to ensure correct packaging and tape-and-reel specifications. Confirm that the SC-63 (DPAK) package variant matches the required footprint dimensions for PCB layout. Check for any recent product change notices regarding material composition or assembly location updates.

Selection Notes

Select this component when standard level gate drive compatibility is required alongside high current handling capabilities. Ensure the application circuit accounts for the 75 A continuous current limit defined by the mounting base temperature conditions. Verify that the gate-source voltage requirements align with the standard level drive specifications provided in the datasheet.

Part Context

This part utilizes Nexperia's advanced TrenchMOS technology within a plastic single-ended surface-mounted package. It is specifically engineered to meet automotive qualification standards, distinguishing it from general-purpose industrial MOSFETs. The device integrates a mounting base connected directly to the drain for efficient heat dissipation.