BUK7507-55B,127

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:2a591d2830a5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3760 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：203W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK7507-55B,127

Overview

The BUK7507-55B,127 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 7.1 mΩ at 25 °C and 14.2 mΩ at 175 °C. Total power dissipation reaches 203 W at 25 °C. It supports non-repetitive avalanche energy of 351 mJ and operates with junction temperatures up to 175 °C.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring robust N-channel switching with standard gate drive compatibility. Ensure thermal management strategies account for the TO-220AB package's thermal resistance characteristics. Validate that the application's peak current demands remain within the specified safe operating area limits defined in the datasheet figures.

Part Context

This part belongs to Nexperia's High-Performance Automotive (HPA) TrenchMOS family. It is designed specifically for automotive critical applications, meeting AEC-Q101 qualification standards. The product utilizes advanced trench MOSFET technology to achieve high performance in plastic packages suitable for heatsink mounting.