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Product Detailed Parameters
- Description：PFET, 75A I(D), 100V, 0.01OHM, 1
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6773 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK7510-100B,127 is a single N-channel TrenchMOS power MOSFET manufactured by Nexperia USA Inc. It features a maximum drain-source voltage of 100 V and a continuous drain current of 75 A. The device exhibits a low on-state resistance of 0.01 Ω at 10 V gate drive. Packaged in a TO-220AB plastic housing with three pins, it supports a junction temperature up to 175 °C and includes an avalanche energy rating of 629 mJ.
Feature Summary
- Utilizes TrenchMOS technology for high-performance switching capabilities
- Features a standard level gate threshold suitable for direct logic control
- Designed for thermally demanding environments with a 175 °C operating rating
Applications
- Automotive systems
- General purpose power switching
- Motor, lamp, and solenoid control
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm packaging details, as standard listings often reference 'BUK7510-100B'. Ensure the component meets RoHS3 compliance standards. Confirm the package type matches the required TO-220AB form factor for your thermal management design.
Selection Notes
Select this component for applications requiring robust automotive-grade performance and high current handling. The low on-resistance minimizes conduction losses, while the high thermal rating ensures reliability in space-constrained or high-temperature environments. Verify gate drive compatibility with standard logic levels.
Part Context
This part belongs to the BUK75 series of N-channel enhancement mode field-effect transistors. These devices are engineered using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. The series is designed to meet rigorous automotive quality standards, providing a balance of low on-state resistance and high breakdown voltage for critical power switching tasks.
Replacement Considerations
Direct substitutes include other Nexperia BUK7510 variants with compatible pinouts and electrical ratings. Cross-brand replacements must match the 100 V / 75 A / 0.01 Ω specifications and TO-220AB package dimensions to ensure mechanical fit and thermal performance equivalence.
