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Product Detailed Parameters
- Description：MOSFET N-CH 55V 11A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：322 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK75150-55A,127 is an N-channel enhancement mode field-effect power transistor utilizing Philips General-Purpose Automotive (GPA) TrenchMOS technology. It features a TO-220AB plastic package with a heatsink-mounted mounting base. Key electrical parameters include a drain-source voltage of 55 V and a continuous drain current of 11 A at 25 °C. The typical on-state resistance is 127 mΩ, with a total power dissipation capability of 36 W. The device supports junction temperatures up to 175 °C and includes non-repetitive avalanche energy ratings.
Feature Summary
- Utilizes TrenchMOS technology for very low on-state resistance
- Compliant with Q101 automotive standards
- Rated for operation up to 175 °C junction temperature
- Compatible with standard level switching applications
Applications
- Automotive systems
- Motor control circuits
- Lamp and solenoid driving
- 12 V and 24 V load switching
- General purpose power switching
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's latest product data sheet before procurement. Confirm that the component status remains active or qualified for new designs, as older revisions may indicate end-of-life status. Ensure thermal management requirements align with the specified junction-to-mounting base thermal resistance values provided in the official documentation.
Selection Notes
Select this component for applications requiring robust automotive-grade performance with high thermal stability. The TO-220AB package facilitates effective heat dissipation through direct mounting to a heatsink. Consider the 55 V breakdown voltage and 11 A current rating when designing circuits for 12 V or 24 V systems. Verify gate drive requirements against the threshold voltage characteristics for optimal switching efficiency.
Part Context
This part belongs to the BUK75/76150-55A series of TrenchMOS standard level FETs originally published by Philips Semiconductors. The BUK75150-55A specifically denotes the TO-220AB through-hole package version, distinct from the surface-mounted D2-PAK variant. The technology leverages GPA specifications to ensure reliability in demanding automotive environments.
Replacement Considerations
The BUK76150-55A serves as a functional substitute within the same series, offering identical electrical characteristics but housed in a SOT404 (D2-PAK) surface-mount package. Designers must account for mechanical footprint differences and thermal interface variations when transitioning between these package types.
