BUK7607-55B,118

$1.20

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8926c8c85e59 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 55V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3760 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：203W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7607-55B,118

Overview

The BUK7607-55B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications with AEC-Q101 compliance, it supports junction temperatures up to 175 °C. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current of 75 A at 25 °C mounting base temperature, and a maximum total power dissipation of 203 W. The device features a typical on-state resistance of 7.1 mΩ at 25 °C and 14.2 mΩ at 175 °C, with a gate-source threshold voltage ranging from 2 V to 4 V.

Feature Summary

Low conduction losses achieved through low on-state resistance
AEC-Q101 compliant for automotive critical applications
Compatible with standard level gate drive sources
Operates in thermally demanding environments due to 175 °C rating

Applications

12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the component meets all applicable RoHS and REACH regulatory standards for the target market. Ensure design margins account for the thermal resistance characteristics provided in the datasheet to maintain safe operating area limits under expected load conditions.

Selection Notes

Select this component when high current handling and robust thermal performance are required in automotive or industrial settings. The standard level gate drive compatibility simplifies driver circuit design. Evaluate the package's thermal dissipation capabilities against the application's heat sink or PCB footprint constraints to ensure reliable operation within the specified junction temperature range.

Part Context

This part belongs to Nexperia's BUK76 series of N-channel TrenchMOS FETs. It is specifically engineered for high-current applications requiring low on-resistance and high reliability. The D2PAK package provides a balance between power handling capacity and surface-mount convenience, making it suitable for various power switching roles in modern electronic systems.