BUK7609-75A,118

$1.72

Description：MOSFET N-CH 75V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9ac6d3f34c53 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6760 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK7609-75A,118

Overview

The BUK7609-75A,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, with typical values of 7.79 mΩ at 25 °C and 18.9 mΩ at 175 °C junction temperature under VGS=10V and ID=25A conditions. Total power dissipation reaches 230 W at 25 °C. It supports a junction temperature range from -55 °C to +175 °C and includes thermal resistance from junction to mounting base of 0.65 K/W.

Feature Summary

Compliant with AEC-Q101 automotive standards for critical applications
Optimized for low conduction losses through minimized on-state resistance
Compatible with standard level gate drive sources
Engineered for thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a 75 V system architecture. The D2PAK package facilitates efficient heat dissipation via the exposed mounting base, making it suitable for applications where thermal management is critical. Ensure gate drive voltages align with the standard level requirements to fully exploit the low on-state resistance characteristics defined in the datasheet specifications.

Part Context

This part belongs to Nexperia's portfolio of N-channel TrenchMOS standard level FETs. The BUK7609-75A is specifically qualified for automotive use, adhering to AEC-Q101 standards. It represents a solution for power switching tasks in vehicle electrical systems, offering robust performance in harsh operating conditions compared to non-automotive grade alternatives.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Engineers should evaluate other Nexperia BUK series devices or comparable TrenchMOS FETs with matching 75 V ratings, similar current capacities, and compatible SOT404 packaging for potential replacements.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The device can withstand a non-repetitive drain-source avalanche energy of 560 mJ under specified conditions (ID=75A, Vsup≤75V, RGS=50Ω, VGS=10V, Tj(init)=25°C).