BUK764R0-75C,118

Description：MOSFET N-CH 75V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f5bb45e4fd93 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：142 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11659 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：333W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK764R0-75C,118

Overview

The BUK764R0-75C is a standard level gate drive N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. Designed for high-performance automotive applications, it complies with AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 75 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device features a typical on-state resistance of 3.4 mΩ at 25 °C and supports a total power dissipation of 333 W under specified conditions.

Feature Summary

Avalanche robust design suitable for demanding switching environments
Qualified for thermally demanding operations with a 175 °C junction temperature rating
Compatible with standard level gate drive requirements

Applications

12 V motor, lamp, and solenoid loads
High performance automotive power systems
High performance Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and tape/reel configuration. Confirm that the component meets the required AEC-Q101 qualification status for your specific automotive application tier. Cross-reference the datasheet revision date to ensure all thermal and electrical characteristics align with your design specifications before finalizing procurement.

Selection Notes

Select this component for applications requiring high current handling in a D2PAK package with standard logic-level gate drive compatibility. Ensure the thermal management design accounts for the 0.45 K/W junction-to-mounting-base thermal resistance. Verify that the 75 V drain-source voltage provides sufficient headroom for the specific circuit operating conditions and transient spikes.

Part Context

This device belongs to Nexperia's TrenchMOS family, engineered for low conduction losses and high reliability. It is specifically qualified for automotive use, adhering to strict quality and reliability standards. The SOT404 (D2PAK) package facilitates efficient heat dissipation, making it suitable for power switching applications in challenging thermal environments.