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Product Detailed Parameters
- Description：MOSFET N-CH 55V 20.3A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：20.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：483 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：62W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK7675-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 55 V, a continuous drain current of 20.3 A at 25 °C mounting base temperature, and total power dissipation of 62 W. The device features a maximum on-state resistance of 150 mΩ at 175 °C junction temperature and supports a peak drain current of 81 A. It operates with a junction temperature range up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Low conduction losses resulting from low on-state resistance
- Compatible with standard level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the application environment stays within the specified absolute maximum ratings, particularly regarding junction temperature and thermal resistance constraints. Ensure gate drive voltages align with the standard level requirements defined in the datasheet to maintain optimal performance and reliability during operation.
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel switching with high current capabilities. The D2PAK package offers efficient thermal management through the mounting base connection. Consider the 55 V drain-source voltage limit and the 20.3 A continuous current rating when sizing the circuit. The low on-state resistance makes it suitable for minimizing power loss in high-efficiency power paths.
Part Context
This part belongs to Nexperia's TrenchMOS family of standard level N-channel FETs. It is specifically engineered for automotive critical applications, ensuring compliance with rigorous industry standards. The device integrates advanced trench technology to deliver high performance in a compact surface-mounted package, balancing electrical efficiency with thermal durability for demanding electronic systems.
Replacement Considerations
Check pinout compatibility and package dimensions against existing designs. Verify that substitute components meet or exceed the 55 V drain-source voltage and 20.3 A drain current specifications. Ensure any replacement also holds AEC-Q101 qualification if automotive usage is required.
