BUK768R3-60E,118

$1.61

Description：MOSFET N-CH 60V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fca7b302597b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：43.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2920 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：137W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK768R3-60E,118

Overview

The BUK768R3-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology in a D2PAK (SOT404) package. It features a 60 V drain-source voltage and supports up to 75 A continuous drain current at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 8.3 mΩ at 10 V gate drive and 20 A. It is qualified to the AEC-Q101 standard for automotive applications, offering a junction temperature rating of 175 °C and repetitive avalanche ruggedness.

Feature Summary

AEC-Q101 compliant for high-performance automotive environments
Repetitive avalanche rated for robust operation
Suitable for thermally demanding conditions with 175 °C junction rating
True standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status remains active within the manufacturer's portfolio before finalizing design-in decisions. Ensure compliance with RoHS directives and check for any recent product change notices regarding labeling or manufacturing location updates.

Selection Notes

Select this component for designs requiring standard level gate drive compatibility alongside high current handling capabilities. The low on-state resistance minimizes conduction losses in power switching circuits. Consider the thermal resistance characteristics when designing heat dissipation strategies for the D2PAK package in constrained spaces.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. The series is engineered for general-purpose power switching and automotive critical applications. The D2PAK package provides a balance between high current capacity and surface-mount convenience for PCB integration.