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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3.76 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：203W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK7E07-55B,127 is an N-channel enhancement mode power FET utilizing High-Performance Automotive TrenchMOS technology. It features a SOT226 (I2PAK) package with a mounting base connected to the drain. Key electrical parameters include a drain-source voltage of 55 V, continuous drain current up to 75 A at 25 °C, and typical on-state resistance of 5.8 mΩ. The device supports junction temperatures up to 175 °C, total power dissipation of 203 W, and avalanche energy ratings of 351 mJ.
Feature Summary
- AEC-Q101 compliant for automotive critical applications
- Standard level gate drive compatibility
- High thermal stability rated for 175 °C operation
- Low on-state resistance for efficient power switching
Applications
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
- 12 V and 24 V loads
Procurement Notes
Verify component authenticity through authorized Nexperia distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives and REACH regulations prior to integration. Review the latest product data sheet for any updates regarding pinning or thermal characteristics before finalizing design specifications.
Selection Notes
Select this component for designs requiring robust automotive-grade reliability and high current handling capabilities. The standard level gate threshold simplifies driver circuit requirements compared to logic-level alternatives. Evaluate thermal management strategies carefully, as the device relies on the mounting base for heat dissipation. Verify that the application voltage and current stresses remain within the specified absolute maximum ratings.
Part Context
This part belongs to the BUK7E series of N-channel TrenchMOS power FETs designed by Nexperia. The series utilizes advanced trench technology to achieve low conduction losses while maintaining high ruggedness. These devices are specifically engineered to meet the stringent qualification standards required for modern automotive electronic control units and power distribution networks.
Replacement Considerations
Direct replacements must match the SOT226 package, 55 V rating, and comparable RDS(on). Verify that substitute components also hold AEC-Q101 certification if used in automotive contexts. Check pinout compatibility and thermal resistance values to ensure equivalent performance without redesigning the PCB footprint or heatsinking infrastructure.
