BUK7E2R6-60E,127

Description：MOSFET N-CH 60V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:0c6c627489bd Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 120A I2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：158 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：11180 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：349W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

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BUK7E2R6-60E,127

Overview

The BUK7E2R6-60E is a standard level N-channel MOSFET utilizing TrenchMOS technology within an I2PAK (SOT226) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 349 W under specified conditions, with a junction temperature range spanning from -55 °C to +175 °C.

Feature Summary

AEC Q101 compliant for automotive reliability
Repetitive avalanche rated for robust performance
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating greater than 1V at 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and marking configurations. Ensure the component meets AEC-Q101 qualification requirements for intended automotive deployment. Cross-reference thermal management designs with the provided transient thermal impedance data to guarantee operation within absolute maximum ratings during high-current switching events.

Selection Notes

Select this component for high-current applications requiring low conduction losses in automotive environments. The I2PAK package supports significant power dissipation when mounted correctly. Evaluate gate drive requirements against the standard level threshold characteristics. Confirm that system thermal design accommodates the junction-to-mounting base thermal resistance for reliable operation at elevated temperatures.

Part Context

This part belongs to the Nexperia BUK7E series of N-channel TrenchMOS FETs. It is designed specifically for high-performance automotive applications requiring ruggedness and efficiency. The SOT226 package provides a balance between current handling capability and thermal performance suitable for chassis-level power distribution and motor control circuits.