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Product Detailed Parameters
- Description：MOSFET 2N-CH 80V 21A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：64W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BUK7K17-80EX is a dual standard level N-channel MOSFET utilizing TrenchMOS technology within an LFPAK56D (SOT1205) package. It features an 80 V drain-source voltage and a continuous drain current of 21 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 12.5 mΩ at 10 V gate drive and 10 A drain current, with a maximum of 16.7 mΩ. Total power dissipation reaches 64 W under specified conditions. Key dynamic parameters include a total gate charge of 32.4 nC and turn-on delay time of 8.1 ns. The component supports junction temperatures up to 175 °C and complies with the AEC-Q101 automotive qualification standard.
Feature Summary
- Dual N-channel configuration in a single LFPAK56D surface mount package
- Qualified for high performance automotive applications per AEC-Q101 standard
- Repetitive avalanche rated for robust operation in demanding environments
- Maintains true standard level gate functionality with threshold voltage greater than 1 V at 175 °C
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel specifications or tape-and-reel dimensions. Confirm that the requested part number matches the exact electrical characteristics required for the target application, particularly regarding the AEC-Q101 compliance status and thermal management requirements inherent to the LFPAK56D package design.
Selection Notes
Select this component when a dual N-channel solution is required for automotive-grade circuits operating at 80 V. The low on-state resistance minimizes conduction losses, while the 175 °C junction temperature rating allows for reliable operation in thermally constrained environments. Ensure the gate drive circuitry can support the standard level threshold requirements for optimal switching performance.
Part Context
This device belongs to the BUK7K17 series of dual N-channel MOSFETs from Nexperia. The series utilizes TrenchMOS technology to achieve low on-resistance and fast switching speeds. These components are specifically engineered for high reliability in automotive electronics, offering a compact footprint through the LFPAK56D package which facilitates efficient heat dissipation.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinouts, thermal resistance values, and electrical limits before implementation.
FAQ
What is the maximum junction temperature for the BUK7K17-80EX?
The maximum junction temperature is 175 °C.
Is the BUK7K17-80EX qualified for automotive applications?
Yes, it is designed and qualified to the AEC-Q101 standard for use in high performance automotive applications.
What technology is used in the BUK7K17-80EX?
It uses TrenchMOS technology.
