SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BUK7K25-40E,115 is a dual N-channel TrenchMOS standard level MOSFET in an LFPAK56D (SOT1205) package. It features a 40 V drain-source voltage and a continuous drain current of 27 A at 25 °C mounting base temperature. The typical on-state resistance is 21.25 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 32 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the complete part number including the trailing suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific AEC-Q101 qualification requirements for your target automotive application before finalizing procurement orders.
Select this component for designs requiring dual N-channel isolation within a compact surface-mount footprint. The low on-resistance and high thermal tolerance make it suitable for efficient power management in space-constrained automotive modules where standard level gate drive compatibility is required.
This device belongs to Nexperia's BUK series of automotive-grade power MOSFETs utilizing TrenchMOS technology. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, supporting higher current densities while maintaining reliability in harsh operating environments typical of modern vehicle electrical architectures.
BUK9K25-40EX