BUK7K25-40E,115

BUK7K25-40E,115

$1.26
  • Description:MOSFET 2N-CH 40V 27A LFPAK56D
  • Series:TrenchMOS™

SKU:da0ea7eae60f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 27A LFPAK56D
  • Series:TrenchMOS™
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:27A
  • Rds On (Max) @ Id, Vgs:25mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:525pF @ 25V
  • Power - Max:32W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1205, 8-LFPAK56
  • Supplier Device Package:LFPAK56D
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BUK7K25-40E,115

Overview

The BUK7K25-40E,115 is a dual N-channel TrenchMOS standard level MOSFET in an LFPAK56D (SOT1205) package. It features a 40 V drain-source voltage and a continuous drain current of 27 A at 25 °C mounting base temperature. The typical on-state resistance is 21.25 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 32 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

  • Dual MOSFET configuration compliant with AEC-Q101 automotive standards
  • Repetitive avalanche rated for robust performance under transient conditions
  • Suitable for thermally demanding environments due to 175 °C maximum junction temperature rating
  • True standard level gate operation with threshold voltage greater than 1 V at 175 °C

Applications

  • 12 V Automotive systems
  • Motors, lamps and solenoid control
  • Start-stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

Procurement Notes

Verify the complete part number including the trailing suffix against official Nexperia documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets specific AEC-Q101 qualification requirements for your target automotive application before finalizing procurement orders.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact surface-mount footprint. The low on-resistance and high thermal tolerance make it suitable for efficient power management in space-constrained automotive modules where standard level gate drive compatibility is required.

Part Context

This device belongs to Nexperia's BUK series of automotive-grade power MOSFETs utilizing TrenchMOS technology. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, supporting higher current densities while maintaining reliability in harsh operating environments typical of modern vehicle electrical architectures.

Replacement Considerations

BUK9K25-40EX

BUK7K25-40E,115BUK7K25-40E,115
$1.26
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