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The BUK7K35-60EX is a dual N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 20.7 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 30 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 38 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the requested part number matches the exact electrical parameters required for the target application. Ensure compliance with RoHS directives and REACH regulations prior to procurement. Cross-reference the manufacturer's latest datasheet to validate any recent design changes or obsolescence notices.
Select this component for designs requiring dual N-channel isolation in a compact surface-mount footprint. The low on-state resistance minimizes conduction losses in power switching circuits. The AEC-Q101 qualification makes it suitable for automotive environments where thermal stability and reliability are critical. Evaluate the thermal resistance from junction to mounting base to ensure adequate heat dissipation for the intended load currents.
This device belongs to the Nexperia BUK7K series of dual MOSFETs designed for automotive and industrial power management. It employs TrenchMOS technology to achieve low on-resistance and fast switching speeds. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, allowing for higher power density in space-constrained PCB layouts.
BUK7K35-60E