BUK7K8R7-40EX

$1.29

Description：MOSFET 2N-CH 40V 30A LFPAK56D
Series：-

SKU:08ae12da8e04 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 40V 30A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：40V
Current - Continuous Drain (Id) @ 25°C：30A
Rds On (Max) @ Id, Vgs：8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：21.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1439pF @ 25V
Power - Max：53W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q100

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BUK7K8R7-40EX

Overview

The BUK7K8R7-40EX is a dual N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at 25 °C mounting base temperature. The typical on-state resistance is 8.5 mΩ at 10 V gate drive and 15 A. Total power dissipation reaches 53 W under specified conditions. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

Dual MOSFET configuration within a single surface-mounted package
Qualified to AEC-Q101 standard for automotive applications
Repetitive avalanche rated for robust operation
Standard level gate with threshold voltage greater than 1 V at 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets all required automotive qualification standards before integration into final designs. Ensure thermal management solutions align with the specified junction-to-mounting base thermal resistance values provided in the datasheet.

Selection Notes

Select this component for designs requiring dual channel isolation within a compact footprint. The low on-state resistance minimizes conduction losses in high-current paths. Verify that the gate drive voltage supports the standard level gate requirements. Consider the thermal resistance characteristics when designing heat dissipation strategies for the LFPAK56D package.

Part Context

This part belongs to Nexperia's BUK series of TrenchMOS power MOSFETs. It is specifically designed for high-performance automotive environments where reliability and thermal stability are critical. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages, supporting the 175 °C operating temperature rating.