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Product Detailed Parameters
- Description：MOSFET N-CH 60V 20A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：508 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The BUK7M42-60EX is an N-channel standard level MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) surface-mount package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 20 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 42 mΩ at VGS = 10 V and 25 °C. It supports a junction temperature range from -55 °C to +175 °C and has a total power dissipation rating of 36 W under specified conditions.
Feature Summary
- Qualified to AEC-Q101 automotive standards for high-performance applications
- Rated for repetitive avalanche energy operation
- Maintains true standard level gate threshold voltage exceeding 1 V at 175 °C
Applications
- 12 V automotive systems
- Motor, lamp, and solenoid control circuits
- Transmission control modules
- Ultra-high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Selection Notes
Select this component when designing for 12 V automotive environments requiring robust thermal performance up to 175 °C. The LFPAK33 package offers efficient heat dissipation suitable for mounting base temperatures. Consider the 42 mΩ on-resistance for efficiency requirements and verify that the 20 A continuous current rating aligns with the peak load demands of the intended motor or solenoid control circuit.
Part Context
This device belongs to Nexperia's BUK7M series of N-channel MOSFETs designed for automotive use. It employs TrenchMOS technology to achieve low on-state resistance within the compact LFPAK33 package. The series is engineered to meet stringent automotive reliability standards, specifically AEC-Q101, ensuring suitability for demanding vehicle electronics applications.
Replacement Considerations
Direct substitutes include other Nexperia BUK7M series devices with compatible voltage and current ratings, such as the BUK7M12-60E or BUK7M19-60E, provided their lower on-resistance values fit the design constraints. Verify pinout compatibility and thermal characteristics before substitution.
FAQ
What is the gate-source threshold voltage at maximum operating temperature?
The gate-source threshold voltage remains greater than 1 V at a junction temperature of 175 °C.
Is the device rated for avalanche operation?
Yes, the BUK7M42-60E is repetitively avalanche rated, with a non-repetitive drain-source avalanche energy rating of 7.7 mJ under specified conditions.
