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Product Detailed Parameters
- Description：MOSFET N-CH 80V 100A LFPAK56
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：63.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5347 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：238W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK7Y7R8-80EX is a standard level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK56 (Power-SO8) package. It features an 80 V drain-source voltage rating and a maximum on-state resistance of 7.8 mΩ at 25 °C. The device supports a continuous drain current of 100 A at a mounting base temperature of 25 °C, with a total power dissipation capacity of 238 W under the same conditions. Qualified to the AEC-Q101 standard, it operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Compliant with AEC-Q101 automotive standards for high-performance applications
- Rated for repetitive avalanche operation
- Designed for thermally demanding environments with a 175 °C junction temperature rating
- Features true standard level gate drive characteristics
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings provided in the datasheet.
Selection Notes
Select this component for automotive circuits requiring robust power switching capabilities. The standard level gate drive simplifies driver selection compared to logic-level alternatives. Consider the LFPAK56 package for its thermal performance in space-constrained PCB layouts. Verify compatibility with system voltage levels and current requirements before integration.
Part Context
This part belongs to the BUK7Y series of N-channel MOSFETs from Nexperia. The series employs TrenchMOS technology to achieve low on-state resistance and efficient switching. These devices are specifically engineered for automotive reliability, adhering to strict industry standards for durability and performance under varying thermal conditions.
Replacement Considerations
Consult official Nexperia substitution guides or contact technical support for verified alternative part numbers. Do not assume cross-compatibility based solely on package type or nominal voltage ratings without reviewing full electrical specifications.
FAQ
Is the BUK7Y7R8-80EX rated for repetitive avalanche events?
Yes, the datasheet explicitly states that the device is repetitive avalanche rated.
What is the maximum operating junction temperature for this MOSFET?
The maximum junction temperature (Tj) is 175 °C.
Does this component require a specialized gate driver due to its threshold voltage?
No, it features a true standard level gate with a VGS(th) rating of greater than 1 V at 175 °C, making it suitable for standard level gate drive sources.
