BUK9217-75B,118

$1.92

Description：MOSFET N-CH 75V 64A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9705b6bc68f7 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 64A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：4029 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK9217-75B,118

Overview

The BUK9217-75B,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a 75 V drain-source voltage rating and supports up to 64 A continuous drain current at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 17 mΩ at VGS = 5 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 185 °C and includes avalanche ruggedness rated for 147 mJ non-repetitive energy.

Feature Summary

AEC Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with an 185 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring logic-level gate drive compatibility alongside high thermal resilience. The 185 °C junction temperature capability allows operation in thermally demanding environments where standard components may fail. Ensure the application utilizes gate voltages compatible with the specified threshold characteristics to maintain optimal on-state performance.

Part Context

This device belongs to Nexperia's TrenchMOS family, designed using advanced planar trench technology. It is specifically qualified to AEC-Q101 standards, ensuring reliability for automotive electronics. The SOT428 (DPAK) package provides efficient thermal dissipation through a dedicated mounting base connected to the drain, facilitating robust performance in power switching applications.