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Product Detailed Parameters
- Description：MOSFET N-CH 75V 45A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：24.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：3120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK9226-75A,118 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 45 A at 25 °C mounting base temperature. The device supports a total power dissipation of 114 W and operates within a junction temperature range of -55 °C to 175 °C. It includes non-repetitive avalanche energy capability rated at 120 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive standards for critical applications
- Optimized for logic level gate drive sources
- Engineered for thermally demanding environments with a 175 °C rating
Applications
- 12 V, 24 V and 42 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix
Selection Notes
This component is designated as End-of-Life by the manufacturer. Designers should evaluate alternative devices from the Nexperia portfolio that maintain similar electrical characteristics and package compatibility. Ensure any replacement part meets the required AEC-Q101 qualification if automotive reliability is necessary for the application.
Part Context
The BUK9226-75A belongs to the Nexperia TrenchMOS family, which employs advanced planar trench technology to achieve low on-state resistance. This series is specifically engineered for high-performance power switching applications requiring robust thermal performance and reliable operation in automotive electronic systems.
Replacement Considerations
The manufacturer has issued an End-of-Life notification for this part number. No direct public substitute part numbers are confirmed in the provided documentation. Engineers must select a compatible alternative from the current Nexperia product lineup.
