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Product Detailed Parameters
- Description：MOSFET N-CH 55V 75A TO220AB
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK9506-55A is an N-channel enhancement mode field-effect power transistor utilizing TrenchMOS™ technology, housed in a SOT78 (TO-220AB) plastic package. It features a drain-source voltage rating of 55 V and a continuous drain current capability of up to 154 A at a mounting base temperature of 25 °C. The device exhibits very low on-state resistance, with maximum values ranging from 4.8 mΩ to 6.7 mΩ depending on gate drive conditions. It supports a junction temperature up to 175 °C and includes an integrated source-drain diode.
Feature Summary
- TrenchMOS™ technology for low on-state resistance
- Logic level compatible gate drive
- Q101 compliant automotive qualification
- High thermal stability rated to 175 °C
Applications
- Automotive power switching for 12 V loads
- General purpose power switching for 24 V loads
- Motor control applications
- Lamp and solenoid driving
Procurement Notes
Verify the specific ordering code against the manufacturer's current database to confirm availability status. Ensure the selected package variant matches the required mechanical footprint, as this model number corresponds specifically to the SOT78 (TO-220AB) housing. Cross-reference the datasheet revision date to confirm technical specifications have not been updated or superseded by newer product data sheets.
Selection Notes
Select this component for high-current switching applications requiring logic-level compatibility. Evaluate the thermal management requirements based on the specified total power dissipation and thermal resistance characteristics. Confirm that the operating junction temperature remains within the rated limits during peak load conditions. Consider the package mounting style when designing the PCB or heatsink interface.
Part Context
This part belongs to the BUK9 series of N-channel TrenchMOS™ power transistors manufactured by Philips Semiconductors (now NXP). The series includes variants with different packaging options, such as the BUK9606-55A in D2-PAK and BUK9E06-55A in I2-PAK, all sharing similar electrical performance characteristics but differing in physical form factor and thermal dissipation capabilities.
Replacement Considerations
Direct substitutes include BUK9606-55A and BUK9E06-55A, which share identical electrical specifications but utilize SOT404 (D2-PAK) and SOT226 (I2-PAK) packages respectively. Verify mechanical fit and thermal interface compatibility before substitution.
