BUK9606-75B,118

$3.78

Description：MOSFET N-CH 75V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2fefa288ac07 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 75A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：95 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：11693 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK9606-75B,118

Overview

The BUK9606-75B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a D2PAK (SOT404) plastic package. It features a drain-source voltage of 75 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 5.5 mΩ at VGS=10V and 6.1 mΩ at VGS=5V, both at 25 °C. Total power dissipation reaches 300 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with an energy rating of 852 mJ.

Feature Summary

AEC-Q101 compliant for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for logic level gate drive sources
Operates in thermally demanding environments with a 175 °C rating

Applications

12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and tape/reel specifications. Confirm that the D2PAK footprint matches the target PCB design constraints. Check for any recent product change notices or lifecycle status updates directly from Nexperia before finalizing procurement plans.

Selection Notes

Select this component when high current handling and low thermal resistance are required in automotive or industrial settings. The logic level gate drive capability allows direct interfacing with standard microcontrollers without additional driver stages. Ensure adequate heatsinking is provided to maintain the mounting base temperature within limits for the desired current load.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs designed for high-efficiency power switching. The D2PAK package provides robust mechanical stability and efficient heat dissipation through the exposed drain pad. It is engineered to meet stringent automotive reliability standards while maintaining competitive electrical performance for general-purpose applications.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout compatibility and thermal characteristics carefully when considering alternative packages.