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Product Detailed Parameters
- Description：MOSFET N-CH 30V 75A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：89 nC @ 5 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：10185 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK962R8-30B is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT404 (D2PAK) plastic package. Designed for automotive critical applications, it meets AEC-Q101 standards. Key electrical parameters include a drain-source voltage of 30 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits low on-state resistance, typically 2.4 mΩ at VGS=5V and ID=25A. It supports a total power dissipation of 300 W and operates with junction temperatures up to 175 °C.
Feature Summary
- Compliant with AEC-Q101 standards for automotive critical applications
- Low conduction losses achieved through low on-state resistance
- Compatible with logic level gate drive sources
- Rated for thermally demanding environments with a 175 °C junction temperature
Applications
- 12 V loads
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and availability status. Confirm that the component meets the required AEC-Q101 qualification for your specific automotive application context. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance characteristics under actual operating conditions.
Selection Notes
Select this component when a logic level N-channel MOSFET with high current capability is required for automotive or general power switching applications. The low RDS(on) makes it suitable for minimizing conduction losses. Verify that the gate drive voltage aligns with the logic level specifications to ensure optimal performance and low resistance operation within the desired temperature range.
Part Context
This part belongs to the Nexperia BUK series of N-channel TrenchMOS logic level FETs. These devices are engineered for high-performance automotive applications requiring robust reliability and efficient power handling. The D2PAK package provides effective thermal dissipation capabilities necessary for high-current operations in compact electronic designs.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility, specifically ensuring the mounting base connection matches the original design requirements. Verify that any substitute meets the same AEC-Q101 qualification and thermal rating constraints.
