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Product Detailed Parameters
- Description：MOSFET N-CH 100V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：133 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：17460 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK965R8-100E is an N-channel TrenchMOS logic level MOSFET in a SOT404 (D2PAK) package. It features a drain-source voltage of 100 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 349 W. Static characteristics include a typical RDSon of 4.62 mΩ at VGS = 5 V and ID = 25 A. Dynamic parameters show a total gate charge of 133 nC and a gate-drain charge of 51 nC. The junction temperature range extends from -55 °C to 175 °C.
Feature Summary
- AEC Q101 compliant for automotive applications
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175 °C rating
- True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
Applications
- 12V, 24V and 48V Automotive systems
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging and reel specifications. Confirm that the component meets all required automotive qualification standards for the intended application environment. Ensure thermal management designs account for the specified junction-to-mounting base thermal resistance values provided in the datasheet.
Selection Notes
Select this component for high-current automotive switching applications requiring true logic level drive compatibility. The SOT404 package provides robust thermal performance suitable for demanding environments. Verify that the 100 V drain-source voltage and 120 A current ratings exceed the peak operational stresses of the target circuit design.
Part Context
This part belongs to the Nexperia BUK9 series of N-channel TrenchMOS logic level FETs. These devices are designed for high-performance automotive applications and utilize advanced trench technology to achieve low on-state resistance. The SOT404 package offers a compact surface-mount solution with a large mounting base for efficient heat dissipation.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and electrical parameters carefully when considering equivalent components from other manufacturers.
