BUK9K12-60E/1X

Description：MOSFET 60V 35A LFPAK56D
Series：-

SKU:35217b7269fc Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 60V 35A LFPAK56D
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
Technology：-
Configuration：-
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：35A (Ta)
Rds On (Max) @ Id, Vgs：10.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：24.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：3470pF @ 25V
Power - Max：68W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-1205, 8-LFPAK56
Supplier Device Package：LFPAK56D
Grade：Automotive
Qualification：AEC-Q101

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BUK9K12-60E/1X

Overview

The BUK9K12-60E is a dual N-channel logic level MOSFET utilizing TrenchMOS technology in an LFPAK56D (SOT1205) package. Designed for high-performance automotive applications, it meets the AEC-Q101 standard. Key electrical parameters include a drain-source voltage of 60 V and a continuous drain current of 35 A at 25 °C mounting base temperature. The typical on-state resistance is 11.5 mΩ at VGS = 5 V and ID = 15 A. Total power dissipation reaches 68 W under specified conditions.

Feature Summary

Dual MOSFET configuration within a single surface-mounted package
Qualified to AEC-Q101 standard for automotive reliability
Repetitive avalanche rated for robust operation
Operates in thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component version matches the required automotive qualification standards. Ensure the marking code corresponds to the exact part number to avoid counterfeit risks during assembly.

Selection Notes

Select this component for circuits requiring dual N-channel isolation with low on-resistance. The logic level gate drive allows compatibility with standard microcontroller outputs. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-current loads. Verify that the operating junction temperature remains within the specified limits for long-term reliability.

Part Context

This device belongs to Nexperia's portfolio of automotive-grade power switches. It integrates two independent N-channel MOSFETs into one compact footprint to save board space. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages. It serves as a direct replacement for legacy discrete dual MOSFET solutions in automotive modules.