SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BUK9K22-80EX is a dual N-channel logic level MOSFET housed in an LFPAK56D (SOT1205) package. It utilizes TrenchMOS technology and meets AEC-Q101 standards for automotive applications. Key electrical parameters include a drain-source voltage of 80 V, a continuous drain current of 21 A at 25 °C mounting base temperature, and a total power dissipation of 64 W. The on-state resistance is typically 15.7 mΩ at 25 °C and 54.5 mΩ at 175 °C junction temperature when driven by a 5 V gate-source voltage. Total gate charge is 23.1 nC.
Verify the specific suffix 'EX' against the official datasheet to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the SOT1205 package outline dimensions. Confirm that the marking code corresponds to the correct part number before integration into production designs.
Select this component for designs requiring dual isolated channels in a compact footprint. The logic level gate drive allows direct interfacing with standard microcontrollers without additional level shifting circuitry. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-current loads.
This device belongs to Nexperia's TrenchMOS family, designed for efficiency and reliability. The LFPAK56D package provides enhanced thermal performance compared to traditional plastic packages. It is intended for use in demanding environments where space constraints and thermal management are critical factors in system design.
BUK9K22-80E is the equivalent non-reel variant. Verify pinout compatibility and thermal characteristics when substituting.