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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 18.2A LFPAK56D
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：18.2A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：701pF @ 25V
- Power - Max：32W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-1205, 8-LFPAK56
- Supplier Device Package：LFPAK56D
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BUK9K25-40RAX is a dual N-channel logic level MOSFET utilizing Application Specific (ASFET) repetitive avalanche silicon technology. It features a drain-source voltage of 40 V and a continuous drain current of 18.2 A at 25 °C. The device offers a typical on-state resistance of 24 mΩ at VGS = 5 V and 19 mΩ at VGS = 10 V. Total power dissipation reaches 32 W with a mounting base temperature of 25 °C. Gate charge is typically 6.3 nC, and the junction-to-mounting base thermal resistance is 4.68 K/W.
Feature Summary
- Fully automotive qualified to AEC-Q101 standard for high reliability applications
- Repetitive avalanche rated with testing up to one billion avalanche events
- LFPAK copper clip package technology providing high robustness and reliability
- Gull wing leads designed for high manufacturability and automated optical inspection
Applications
- 12 V, 24 V and 48 V automotive systems
- Repetitive avalanche topologies
- Engine control units
- Transmission control systems
- Actuator and auxiliary loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Ensure the component matches the required automotive qualification standards for your specific application environment. Cross-reference the datasheet revision date with your design requirements to guarantee compatibility with current manufacturing specifications.
Selection Notes
Select this component for designs requiring high ruggedness in repetitive avalanche conditions. The LFPAK56D package supports efficient thermal management through its copper clip technology. Verify that the gate drive voltage aligns with the logic level characteristics to ensure optimal on-state resistance performance under varying load conditions.
Part Context
This device belongs to Nexperia's automotive-grade MOSFET portfolio, specifically engineered for demanding power switching environments. It integrates TrenchMOS technology within a Dual LFPAK (SOT1205) package. The product is designed to meet stringent automotive reliability standards while offering enhanced thermal performance compared to standard packages.
Replacement Considerations
BUK9K25-40RA
FAQ
What is the maximum number of repetitive avalanche events the device can withstand?
The device has been tested to withstand up to one billion repetitive avalanche events.
How does the on-state resistance change during repetitive avalanche cycling?
The RDSon at VGS=5V increases as a function of repetitive avalanche cycles, as detailed in the application note AN10273.
What is the thermal resistance from junction to mounting base?
The thermal resistance from junction to mounting base is typically 4.68 K/W.
