BUK9K45-100E,115

Overview

The BUK9K45-100E,115 is a dual N-channel TrenchMOS logic level MOSFET in an LFPAK56D (SOT1205) package. It features a drain-source voltage of 100 V and a continuous drain current of 21 A at 25 °C mounting base temperature. The typical on-state resistance is 38.3 mΩ at VGS = 5 V and ID = 5 A. Total power dissipation reaches 53 W at 25 °C. The device supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration with Q101 compliance for automotive reliability
• True logic level gate operation maintaining threshold voltage above 0.5 V at 175 °C
• Repetitive avalanche rated for robust performance in demanding switching environments

Applications

• 12 V Automotive systems
• Motors, lamps and solenoid control
• Start-stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring dual isolated channels within a single surface-mount footprint. The LFPAK56D package provides efficient thermal management suitable for high-power density layouts. Ensure gate drive voltages align with the logic level specifications to maintain optimal on-state resistance characteristics during operation.

Part Context

This part belongs to Nexperia's BUK9K series of TrenchMOS logic level FETs. These devices utilize advanced trench technology to achieve low on-resistance and fast switching speeds. The series is specifically engineered for high-performance automotive applications requiring AEC-Q101 qualification and ruggedness against electrical stress.

Replacement Considerations

Direct replacements must match the LFPAK56D package and 100V/21A ratings. Verify pinout compatibility and thermal resistance values. Cross-reference with other BUK9K variants only if electrical parameters exceed requirements without compromising board layout constraints.