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Product Detailed Parameters
- Description：MOSFET N-CH 100V 11.5A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：119mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.05V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：882 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：44W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
Download product information
Overview
The Nexperia BUK9M120-100EX is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK33 (SOT1210) package. It features a drain-source voltage of 100 V and a maximum on-state resistance of 120 mΩ at VGS = 5 V. The device supports a continuous drain current of 11.5 A and dissipates up to 44 W. Qualified to the AEC-Q101 standard, it operates with junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Logic level gate drive capability with threshold voltage maintained above 0.5 V at elevated temperatures
- Repetitive avalanche rated for robust performance in demanding switching environments
- Qualified to AEC-Q101 automotive standards for high reliability applications
Applications
- 12 V, 24 V and 48 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure the component matches the exact LFPAK33 package outline and marking codes specified in the datasheet to guarantee compatibility with automated assembly processes and thermal management requirements.
Selection Notes
Select this component for designs requiring low on-state resistance at logic-level gate voltages. The 175 °C junction temperature rating allows operation in thermally constrained environments. Verify that the required drain current and power dissipation limits align with the mounting base temperature conditions defined in the thermal characteristics section of the datasheet.
Part Context
This device belongs to Nexperia's NextPower SMD series, designed for efficient power switching. The LFPAK33 package provides a compact footprint with enhanced thermal performance through a dedicated mounting base connected to the drain. The product integrates TrenchMOS technology to minimize conduction losses while maintaining high switching speeds suitable for modern electronic control units.
Replacement Considerations
Consult the official Nexperia replacement guide for verified cross-reference part numbers. Do not substitute based solely on pinout or voltage ratings; ensure thermal resistance and package dimensions match the existing design constraints.
