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Product Detailed Parameters
- Description：MOSFET N-CH 30V 70A LFPAK33
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：4.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：22.5 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：2467 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK33
- Package / Case：SOT-1210, 8-LFPAK33 (5-Lead)
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Overview
The Nexperia BUK9M5R2-30EX is a logic level N-channel MOSFET utilizing TrenchMOS technology, housed in an LFPAK33 (SOT1210) plastic surface-mounted package. It features a drain-source voltage of 30 V and a continuous drain current of 70 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 5.2 mΩ at VGS = 5 V and ID = 25 A. Total power dissipation reaches 79 W under specified conditions. The component supports junction temperatures up to 175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Compliant with the AEC Q101 standard for high-performance automotive applications.
- Rated for repetitive avalanche operation to withstand transient energy events.
- Designed for thermally demanding environments with a 175 °C junction temperature capability.
- Features true logic level gate characteristics with a threshold voltage greater than 0.5 V at 175 °C.
Applications
- 12 V automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape configuration. Ensure compliance requirements including RoHS and REACH status are validated for the target region. Confirm that the LFPAK33 footprint matches the design layout before finalizing procurement orders.
Selection Notes
Select this component for designs requiring low on-state resistance and robust thermal performance in compact surface-mount layouts. The logic level gate drive allows compatibility with standard 5 V control signals while maintaining high current capacity. Consider the repetitive avalanche rating when designing circuits subject to inductive load switching or transient voltage spikes.
Part Context
This device belongs to Nexperia's portfolio of N-channel MOSFETs designed for automotive and industrial markets. It employs TrenchMOS technology to achieve low RDS(on) within the LFPAK33 package. The product line emphasizes reliability through AEC Q101 qualification, targeting applications where space constraints and thermal management are critical design factors.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout configurations and thermal resistance values when evaluating potential replacements to ensure mechanical and electrical compatibility without redesigning the PCB layout.
