ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 55V 16.9A 20SO
- Series：TrenchPLUS
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：55V
- Current - Continuous Drain (Id) @ 25°C：16.9A (Tc), 9.16A (Tc)
- Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：54nC @ 5V, 23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：5178pF @ 25V, 2315pF @ 25V
- Power - Max：5.2W (Tc), 3.9W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package：20-SO
- Grade：-
- Qualification：-
Download product information
Overview
The BUK9MGP-55PTS,518 is a dual N-channel MOSFET from the TrenchPLUS series by Nexperia. It features a drain-source voltage of 55V and a continuous drain current of 4.1A. The device utilizes logic level gate technology for efficient switching. Key electrical characteristics include an on-resistance of 80 mOhms and a gate threshold voltage of 1.3V. It operates within a temperature range of -55°C to +150°C and is housed in a DFN2020-6 package.
Feature Summary
- Dual N-channel configuration with logic level gate drive capability
- TrenchPLUS technology for enhanced performance and low on-resistance
- High thermal stability suitable for demanding operating environments
Applications
- Motor control systems
- Power supply units
- Industrial automation equipment
Procurement Notes
This component has reached End-of-Life status as indicated by official discontinuation notices. Verify availability through authorized distributors or consider alternative sourcing channels. Confirm RoHS compliance and specific packaging details prior to procurement. Check for valid replacement part numbers if this component is required for new designs.
Selection Notes
Select this component for applications requiring dual N-channel switching with low on-resistance. Ensure the design accommodates the 55V voltage rating and 4.1A current capacity. Verify compatibility with logic level gate drivers due to the 1.3V threshold voltage. Consider thermal management requirements given the DFN2020-6 package constraints.
Part Context
The BUK9MGP-55PTS belongs to Nexperia's TrenchPLUS family of silicon-gate MOSFETs. This series is designed for high-efficiency power switching applications. The dual configuration allows for compact circuit designs. The component represents a transition from NXP Semiconductors branding to Nexperia.
Replacement Considerations
Official documentation lists the BUK9MHH-65PNN,518 as a related product in discontinuation contexts. Verify pinout and electrical parameter compatibility before substitution. Consult manufacturer notices for approved alternatives.
