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Product Detailed Parameters
- Description：MOSFET N-CH 100V 69A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：14.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45.8 nC @ 5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：6139 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：195W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK9Y15-100E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8/SOT669) package. It features a drain-source voltage of 100 V and a continuous drain current of 69 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 12.1 mΩ at VGS = 5 V and ID = 20 A. Total power dissipation reaches 195 W under specified conditions. The component operates within a junction temperature range of -55 °C to +175 °C and includes repetitive avalanche rating capabilities.
Feature Summary
- Qualified to AEC-Q101 standard for high-performance automotive applications
- True logic level gate operation with threshold voltage greater than 0.5 V at 175 °C
- Repetitive avalanche rated for robust performance in demanding environments
Applications
- 12 V, 24 V and 48 V Automotive systems
- Motors, lamps and solenoid control
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when low conduction losses are required in automotive power stages. The true logic level gate drive capability allows direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. The LFPAK56 package provides efficient thermal management for high-current applications requiring compact footprints.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel MOSFETs designed for automotive reliability. The BUK9Y15 series specifically targets applications needing low on-resistance combined with high current handling in surface-mounted packages. It represents a standardized solution for power switching in modern vehicle electrical architectures.
Replacement Considerations
Direct replacements must match the LFPAK56 (SOT669) footprint and pinout. Verify that substitute parts meet the same AEC-Q101 qualification and maintain comparable RDS(on) and thermal resistance specifications to ensure circuit compatibility.
