BUK9Y19-100E,115

Overview

The BUK9Y19-100E,115 is a logic level N-channel MOSFET utilizing TrenchMOS technology in an LFPAK56 (Power-SO8) package. It features a drain-source voltage of 100 V and a maximum on-state resistance of 19 mΩ at VGS = 5 V and ID = 15 A. The device supports a continuous drain current of 56 A at 25 °C mounting base temperature. It operates within a junction temperature range of -55 °C to +175 °C and has a total power dissipation rating of 167 W at 25 °C.

Feature Summary

• Qualified for high performance automotive applications according to the AEC Q101 standard.
• Features true logic level gate drive capability with a threshold voltage greater than 0.5 V at 175 °C.
• Rated for repetitive avalanche energy operation up to 94.1 mJ under specified conditions.

Applications

• 12 V, 24 V and 48 V Automotive systems
• Motors, lamps and solenoid control
• Transmission control
• Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when low conduction losses are required in automotive environments. The logic level gate drive allows direct interfacing with standard microcontrollers or drivers without additional level shifting circuitry. Ensure thermal management design accounts for the 0.9 K/W thermal resistance from junction to mounting base to maintain reliability within the 175 °C limit.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It is designed specifically for high-performance automotive applications requiring robust switching capabilities and high thermal stability. The LFPAK56 package provides efficient heat dissipation through a large mounting base connected to the drain terminal.

Replacement Considerations

BUK9Y19-100EX