BUK9Y22-30B,115

$0.71

Description：MOSFET N-CH 30V 37.7A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:792c00a7770f Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 37.7A LFPAK56
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：37.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 5 V
Vgs (Max)：±15V
Input Capacitance (Ciss) (Max) @ Vds：940 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：59.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：LFPAK56, Power-SO8
Package / Case：SC-100, SOT-669

Download product information

BUK9Y22-30B,115

Overview

The BUK9Y22-30B,115 is a logic level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It is designed for automotive critical applications and qualified to AEC-Q101 standards. Key electrical parameters include a drain-source voltage (VDS) of 30 V, a continuous drain current (ID) of 37.7 A at 25 °C mounting base temperature, and a total power dissipation (Ptot) of 59.4 W. The device features a low on-state resistance (RDSon) ranging from 13.5 mΩ to 22 mΩ depending on gate drive conditions. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 47 mJ.

Feature Summary

Low conduction losses achieved through minimized on-state resistance
Qualified for automotive critical applications in compliance with AEC-Q101 standards
Compatible with logic level gate drive sources for simplified control
Operates reliably in thermally demanding environments with a 175 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring a 30 V N-channel MOSFET capable of handling high currents up to 37.7 A. The logic-level gate drive compatibility simplifies interface with standard microcontrollers or drivers. Ensure thermal management strategies account for the 59.4 W power dissipation limit and the 175 °C maximum junction temperature capability inherent to the LFPAK package.

Part Context

This device belongs to Nexperia's BUK9Y series of N-channel TrenchMOS logic level FETs. These components are engineered using advanced trench technology to deliver high performance in compact plastic packages. The series is specifically targeted at automotive markets, offering robust reliability and thermal stability suitable for harsh operating conditions found in modern vehicle electronics.

Replacement Considerations

Check datasheets for alternative parts with matching 30 V VDS, similar RDSon values, and compatible SOT669/LFPAK packaging. Verify that any substitute also meets AEC-Q101 requirements if automotive qualification is mandatory for the application.