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The C2M0045170P is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide MOSFET utilizing second-generation SiC technology. It features a TO-247-4L Plus package with a separate driver source pin and an 8mm creepage distance between drain and source. Key electrical parameters include a maximum drain-source voltage of 1700 V, a continuous drain current of 75 A at 25 °C case temperature, and a typical on-resistance of 40 mΩ at 20 V gate drive. The device supports a junction temperature range from -40 °C to +150 °C.
Verify the specific ordering suffix 'P' corresponds to the TO-247-4L Plus package variant when sourcing. Confirm that the component meets RoHS compliance standards as specified in the datasheet. Ensure compatibility with the recommended solder pad layout provided by the manufacturer to maintain thermal performance and mechanical integrity during assembly.
Select this component for designs requiring high-voltage isolation and robust switching performance. The separate driver source pin facilitates precise gate control, reducing parasitic effects. Evaluate the thermal resistance characteristics against the system's cooling capabilities to ensure operation within the specified junction temperature limits under varying load conditions.
This part belongs to the Wolfspeed C2M series of discrete silicon carbide MOSFETs. The series leverages Wolfspeed's established SiC material expertise to provide devices suitable for demanding power conversion environments. The TO-247-4L Plus package offers industry-standard mounting dimensions while providing enhanced electrical isolation compared to traditional three-terminal packages.
Direct replacements must match the 1700 V rating and TO-247-4L Plus footprint. Verify that alternative devices support the required 75 A continuous current and possess comparable gate charge specifications to maintain existing switching frequencies without redesigning the gate drive circuitry.
The fourth pin serves as a dedicated driver source connection. This separation from the main power source minimizes parasitic inductance and reduces gate ringing during switching transitions.
The package provides an 8mm creepage distance between the drain and source terminals, enhancing insulation and reliability in high-voltage applications such as solar inverters and motor drives.