C3M0015065K

Overview

The Wolfspeed C3M0015065K is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET utilizing C3M™ technology. It features a TO-247-4L package with a 650 V drain-source voltage rating and a typical on-resistance of 15 mΩ at 25°C. The device supports a continuous drain current of 120 A and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a total gate charge of 188 nC, a maximum power dissipation of 416 W, and a thermal resistance from junction to case of 0.35 °C/W.

Feature Summary

• Optimized package design incorporating a separate driver source pin to minimize parasitic inductance and reduce switching losses.
• High-speed switching capability enabled by low capacitances and optimized internal gate resistance.
• Fast intrinsic body diode characterized by low reverse recovery charge for efficient hard-switching applications.
• Enhanced isolation safety featuring an 8 mm creepage distance between the drain and source terminals.

Applications

• Electric vehicle chargers
• Solar inverters
• Uninterruptible power supplies
• Switched-mode power supplies
• DC/DC converters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure ordering suffixes match specific packaging requirements. Validate datasheet revision against the latest Wolfspeed documentation to account for potential parameter updates or marking changes during the corporate transition period.

Selection Notes

Select this component for high-efficiency power conversion systems requiring robust thermal performance and fast switching speeds. The TO-247-4L package facilitates through-hole mounting suitable for industrial environments. Evaluate system requirements against the 650 V breakdown voltage and 120 A current limits. Consider the low on-resistance for minimizing conduction losses in high-frequency topologies such as PFC stages and resonant converters.

Part Context

This part belongs to the Wolfspeed C3M™ series of silicon carbide power MOSFETs. The series is engineered to deliver industry-leading figure-of-merit values, combining low on-resistance with fast switching characteristics. These devices are designed to replace traditional silicon counterparts in demanding power electronics applications, offering superior performance under high-temperature conditions.

Replacement Considerations

Direct replacements require matching the 650 V rating, TO-247-4L package, and comparable Rds(on) specifications. Verify that alternative components support similar gate drive voltages and thermal management constraints. Cross-reference switching energy parameters to ensure compatibility with existing circuit designs without modification.

FAQ

What is the recommended operational gate-source voltage?

The datasheet specifies an operational gate-source voltage range of -4 V to +15 V, with a recommended turn-on voltage of 15 V.

How does the separate driver source pin benefit the circuit?

The dedicated driver source pin isolates the gate drive return path from the high-current power source, reducing ground bounce and minimizing parasitic inductance effects during switching transitions.

Is this component suitable for high-temperature operation?

Yes, the device is rated for a maximum junction temperature of +175°C, allowing for reliable operation in thermally constrained environments.