C3M0900170M

$5.04

Description：SIC, MOSFET, 900M, 1700V, TO-247
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:ebf6c0596144 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 900M, 1700V, TO-247
Series：-
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：1.25Ohm @ 1.99A, 15V
Vgs(th) (Max) @ Id：4.2V @ 550µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 15 V
Vgs (Max)：+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds：202 pF @ 1.2 kV
FET Feature：-
Power Dissipation (Max)：33W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3PF-3L
Package / Case：TO-3P-3 Full Pack

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C3M0900170M

Overview

The C3M0900170M is a 1700 V, N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET from Wolfspeed. It features a maximum drain-source voltage of 1700 V and an on-state resistance of 900 mΩ at 25°C. The device operates with a gate-source voltage range of +12 to +18 V for turn-on and -4 to 0 V for turn-off. It supports a continuous drain current of 4.0 A at 25°C case temperature and handles a pulsed drain current of 15 A. The component is housed in a fully isolated TO-3PF package, rated for junction temperatures up to 175°C.

Feature Summary

Fully isolated package design simplifies assembly by eliminating the need for separate insulating materials
High-speed switching capability with low capacitances reduces switching losses and minimizes gate ringing
Operational compatibility with standard flyback controllers through flexible gate drive voltage ranges

Applications

Auxiliary power supplies
Switch mode power supplies
High-voltage capacitive loads

Procurement Notes

Verify that the specific order matches the C3M0900170M part number and TO-3PF package configuration. Confirm compliance requirements such as RoHS and Halogen-free status against project specifications. Ensure thermal management designs account for the specified junction temperature limits and power dissipation ratings provided in the datasheet.

Selection Notes

Select this component for high-voltage applications requiring robust isolation and efficient switching performance. The wide operational gate voltage range allows compatibility with various controller types. Consider the thermal characteristics and package dimensions when designing heat sinks and PCB layouts to ensure reliable operation within the specified temperature range.

Part Context

This discrete SiC MOSFET belongs to Wolfspeed's industrial-grade silicon carbide portfolio. It utilizes advanced third-generation technology to deliver high blocking voltage and low on-resistance. The product is designed to enhance system efficiency and power density in demanding power electronics environments.

Replacement Considerations

No direct substitute part numbers are documented in the official datasheet. Designers should evaluate equivalent 1700 V SiC MOSFETs based on matching electrical parameters and package footprint if replacement is necessary.